copyright Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
The time evolution of the photoluminescence (PL) of 1300-nm emitting Surveillance, Safety InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated.The PL spectra observed at the early stages of copyright recombination is dominated by two transitions.These two transitions are iden